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| SUR50N03-12P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A)a 17.5 14.5 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D DC/DC Converters - High-Side, Desktop CPU Core D Synchronous Rectifiers D TO-252 Reverse Lead DPAK Drain Connected to Tab G D S G Top View Ordering Information: SUR50N03-12P--E3 SUR50N03-12P-T4--E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TA = 25_C TA = 25_C TA = 100_C IDM IS IAS EAS PD TJ, Tstg ID Symbol VDS VGS Limit 30 "20 47 17.5 12.4 40 5 30 45 46.8 6.5a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72774 S-32695--Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 18 40 2.6 Maximum 23 50 3.2 Unit _C/W C/W 1 SUR50N03-12P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A 15 0.0138 40 0.010 0.012 0.017 0.0175 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 0.70 VDS = 15 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 285 140 13 6.0 5.0 1.5 9 15 20 12 2.50 15 25 30 20 ns W 20 nC p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 40 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 25 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 80 VGS = 10 thru 5 V 60 I D - Drain Current (A) I D - Drain Current (A) 60 80 Transfer Characteristics 40 4V 40 TC = 125_C 20 25_C 0 -55_C 3 4 5 6 20 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 1 2 VGS - Gate-to-Source Voltage (V) Document Number: 72774 S-32695--Rev. A, 19-Jan-04 www.vishay.com 2 SUR50N03-12P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 80 TC = -55_C 60 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 0.04 0.05 Vishay Siliconix On-Resistance vs. Drain Current 25_C 125_C 0.03 40 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 0.00 0 20 40 ID - Drain Current (A) 10 VDS = 15 V ID = 50 A 60 80 ID - Drain Current (A) 2500 Capacitance Gate Charge 2000 C - Capacitance (pF) Ciss 1500 V GS - Gate-to-Source Voltage (V) 8 6 1000 4 500 Crss 0 0 5 10 15 Coss 2 0 20 25 30 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72774 S-32695--Rev. A, 19-Jan-04 www.vishay.com 3 SUR50N03-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 20 New Product 1000 Safe Operating Area 16 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10, 100 ms 12 10 1 ms 10 ms 100 ms 1s TA = 25_C Single Pulse 10 s dc, 100 s 8 1 4 0.1 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72774 S-32695--Rev. A, 19-Jan-04 |
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